Buy HGTG11N120CND: The Ultimate Solution for High-Power Switching

Pros and Cons of HGTG11N120CND: Is it Worth the Investment?

Are you looking for a reliable high-power switching solution? Look no further than HGTG11N120CND. This device is designed to handle high voltage and current loads, making it a favorite among electronic enthusiasts and experts.

Pros:

- High voltage and current handling capabilities

- Fast switching speed for optimal performance

- Low collector-to-emitter saturation voltage for energy efficiency

- Robust and durable design for extended lifespan - Compatible with a variety of electronic applications

Cons:

- Relatively expensive compared to some other high-power switching options

- May require advanced technical knowledge to install and operate properly

Overall, HGTG11N120CND represents a solid investment for those in need of a dependable high-power switching device. With excellent performance and energy efficiency, this device is sure to deliver results. However, it is important to note that its price point and technical requirements may not be ideal for all users.

Technical details:

• Manufacturer:onsemi
• Product Category:IGBT Transistors
• RoHS:Details
• Technology:Si
• Package/Case:TO-247-3
• Mounting Style:Through Hole
• Configuration:Single
• Collector- Emitter Voltage VCEO Max:1.2 kV
• Collector-Emitter Saturation Voltage:2.1 V
• Maximum Gate Emitter Voltage:- 20 V, + 20 V
• Continuous Collector Current at 25 C:43 A
• Pd - Power Dissipation 298 W
• Minimum Operating Temperature:- 55 C
• Maximum Operating Temperature:+ 150 C
• Series: HGTG11N120CND
• Packaging:Tube
• Brand:onsemi / Fairchild
• Continuous Collector
• Current:55 A
• Continuous Collector Current Ic Max:43 A
• Gate-Emitter Leakage Current:+/- 250 nA
• Height:20.82 mm
• Length:15.87 mm
• Product Type:IGBT Transistors
• Subcategory:IGBTs
• Width:4.82 mm
• Part # Aliases: HGTG11N120CND_NL
• Unit Weight:6,390 g

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