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Model Number : STWA48N60DM2
Place of Origin : Guangdong, China
Brand Name : Original
Packaging Details : Standard carton
Supply Ability : 1000 Piece/Pieces per Week
MOQ : 1
Price : Negotiable
Type : MOSFET
D/C : New
Package Type : Through Hole
Application : General Purpose
Brand : MOSFET
Power - Max : 300W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
FET Type : N-Channel
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 40A (Tc)
Rds On (Max) @ Id, Vgs : 79mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 5V @ 250uA
Gate Charge (Qg) (Max) @ Vgs : 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 3250pF @ 100V
Drive Voltage (Max Rds On, Min Rds On) : 10V
Vgs (Max) : ±25V
Stock : In Stock
Looking for a MOSFET that can handle the most demanding high-efficiency converters? Look no further than the 48N60DM2. With its low recovery charge and time, combined with low RDS(on), this MOSFET is ideal for bridge topologies and ZVS phase-shift converters. In addition to its excellent performance, the 48N60DM2 also features extremely low gate charge and input capacitance, as well as being 100% avalanche tested.
Plus, its extremely high dv/ dt ruggedness and Zener-protection make it a reliable and safe choice. Upgrade your converter with the 48N60DM2 - the perfect choice for high efficiency and reliability. This text is meant to optimize conversion by focusing on the product's features and benefits, while using engaging language to grab the reader's attention. By highlighting the product's advantages, customers are more likely to take action and purchase the product.
Product Category |
MOSFET |
Technology |
Si |
Mounting Style |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Polarity |
N-Channel |
Number of Channels |
1 Channel |
Vds - Drain-Source Breakdown Voltage |
600 V |
Id - Continuous Drain Current |
40 A |
Rds On - Drain-Source Resistance |
65 mOhms |
Vgs - Gate-Source Voltage |
- 25 V, + 25 V |
Vgs th - Gate-Source Threshold Voltage |
3 V |
Qg - Gate Charge |
70 nC |
Minimum Operating Temperature |
- 55 C |
Maximum Operating Temperature |
+ 150 C |
Pd - Power Dissipation |
300 W |
Channel Mode |
Enhancement |
Packaging |
Tube |
Configuration |
Single |
Series |
STWA48N60DM2 |
Transistor Type |
1 N-Channel |
Fall Time |
9.8 ns |
Product Type |
MOSFET |
Rise Time |
27 ns |
Subcategory |
MOSFETs |
Typical Turn-Off Delay Time |
131 ns |
Typical Turn-On Delay Time |
27 ns |
Unit Weight |
0.211644 oz |
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48N60DM2 STWA48N60DM2 MOSFET PTD High Voltage Replacement Part For PSU Power Supply Images |